- Database
- Experimentalists
- Date
- 2018-04-18
- Thickness
- 2.13e-08 $mm$
- Diameter
- 10.0 $mm$
- Substrate material
- Silicium
- Substrate comments
- Silicium wafer Si(100) - 350 microns
- Comments
- After deposition of all the layers, the sample is annealed under vacuum at 700◦C for 20 min.
- Temperature
- 25.0 $\pm$ -268.1 $^{\circ}C$
- Temperature max
- 19.85 $^{\circ}C$
- Type
- ambient air
- Pressure
- 1.0 $atm$
- Number
- 18
- Arrangement
- 6 successive alternate adsorbed layers of Co, Fe and Pt
- Layers
-
- Pt , 1.4e-09 $mm$
- Fe , 1.15e-09 $mm$
- Co , 1e-09 $mm$
- Pt , 1.4e-09 $mm$
- Fe , 1.15e-09 $mm$
- Co , 1e-09 $mm$
- Pt , 1.4e-09 $mm$
- Fe , 1.15e-09 $mm$
- Co , 1e-09 $mm$
- Pt , 1.4e-09 $mm$
- Fe , 1.15e-09 $mm$
- Co , 1e-09 $mm$
- Pt , 1.4e-09 $mm$
- Fe , 1.15e-09 $mm$
- Co , 1e-09 $mm$
- Pt , 1.4e-09 $mm$
- Fe , 1.15e-09 $mm$
- Co , 1e-09 $mm$