Tholins Film for X-ray irradiation LATMOS 95 | SSHADE

Processing math: 100%

Sample

Name: Tholins Film for X-ray irradiation LATMOS 95%N2:5%CH4

Owner of sample

Database

SPAN

Experimentalists

Origin of sample

Date: 2017-01-01
Provider: Nathalie Carrasco at LATMOS

Physical characteristics

Thickness: 1139.0 $\pm$ 42.0 $nm$
Surface roughness: 13
Substrate material: Si
Substrate comments: Single side polished SI substrate. Upon plasma irradiation, SiO2 might form on the interface
Comments: Homogeneous organic thin film.

Sample environment: Temperature

Temperature: 295.0 $\pm$ 2.0 $K$
Comments: Sample kept at ambient temperature

Sample environment: Fluid

Type: ambient air
Fluid temperature: 295.0 $\pm$ 2.0 $K$
Fluid pressure: 1.0 $atm$

Sample environment: Irradiation

Source: synchrotron radiation
Chronology: before spectrum
Irradiation time: 60.0 $min$

Particle

Family: photons
Type: X photons
Energy: 0.5 $keV.particle^{-1}$
Particle flux: 1e+17 $particle.s^{-1}.m^{-2}$
Particle fluence: 3.6e+20 $particle.m^{-2}$

Radiance

Radiant flux: 8.01088 $W * m**-2$
Radiant fluence: 28839.2 $J * m**-2$

Layers in sample

Number

1

Layers

Tholins Film for X-ray irradiation LATMOS 95%N2:5%CH4 , 1139.0 $nm$