Sample
Name
OxyTholins LATMOS Film 90%N2:5%CO2:5%CH4
Date
2017-01-01
Provider
Nathalie Carrasco at LATMOS
Thickness
79.0 $\pm$ 1.0 $nm$
Surface roughness
a few nm
Substrate material
Si
Substrate comments
Single side polished SI substrate. Upon plasma irradiation, SiO2 might form on the interface
Comments
Homogeneous organic thin film. Thickness precision and thickness error might be underestimated in Gavilan et al. 2017 paper
Temperature
295.0 $\pm$ 2.0 $K$
Comments
Sample kept at ambient temperature
Type
ambient air
Fluid temperature
295.0 $\pm$ 2.0 $K$
Fluid pressure
1.0 $atm$