- Database
- Experimentalists
- Date
- 2011-01-31
- Provider
- Nathalie Carrasco at LATMOS
- Thickness
- 850.0 $\pm$ 30.0 $nm$
- Surface roughness
- 15nm +/- 1nm
- Substrate material
- Si
- Comments
- Homogeneous organic thin film
- Temperature
- 295.0 $\pm$ 2.0 $K$
- Comments
- Sample kept at ambient temperature
- Type
- ambient air
- Fluid temperature
- 295.0 $\pm$ 2.0 $K$
- Fluid pressure
- 1.0 $atm$
- Number
- 1
- Layers
-
- Tholins thin film 95%N2:5%CH4 , 850.0 $nm$
- Title
- Tholins formation by plasma discharge in a 95%N2:5%CH4 gas mixture
- Sample
- Tholins LATMOS Film 95%N2:5%CH4 (this sample)
- Processing steps
-
Step Chronology Date Type Process Changes #1 2011-01-31 fluid physical Co-Injection in the PAMPRE chamber of 27.5 sccm of $N_2$:$CH_4$ in a 90%:10% and of 27.5 sccm of pure $N_2$ for a total gas flow of 55sscm #2 2011-01-31 irradiation irradiation using a RF CCP Plasma at 13.56 MHz and 30 W injected power of $CH_4$:$N_2$=5%:95% gas mixture at ambient temperature and 0.9 mbar formation of a tholins thin film on Silicon wafer #3 2011-01-31 no Collecting the Silicon wafer with tholins thin film from the reactor (and thus exposing them to ambient air) No changes observed macroscopically. Adsorption of traces of Oxygenated species on the thin film (not affecting optical properties)