- Database
- Experimentalists
- Date
- 1995-02-20
- Diameter
- 20000.0 ${\mu}m$
- Substrate material
- CsI
- Substrate comments
- disk diameter 25mm, thickness 2mm
- Temperature
- 15.0 $\pm$ 0.5 $K$
- Temperature max
- 15.0 $\pm$ 0.5 $K$
- Type
- vacuum
- Publications
- Number
- 1
- Layers
- Title
- Crystallisation of CH4 from gases
- Matters
- Materials
- Processing steps
-
Step Chronology Date Type Process Changes #1 during layer formation 1995-04-25 layer formation slow molecular flow of CH4 gas (300K - 10 mb) deposition at 15K under vacuum from gas to solid phase