- Database
- Experimentalists
- Date
- 1995-06-13
- Diameter
- 20000.0 ${\mu}m$
- Surface roughness
- very low
- Substrate material
- CsI
- Substrate comments
- disk diameter 25mm, thickness 2mm
- Temperature
- 15.0 $\pm$ 0.5 $K$
- Temperature max
- 15.0 $\pm$ 0.5 $K$
- Type
- vacuum
- Publications
- Number
- 1
- Layers
- Title
- Condensation of (partly)crystalline $C_2H_6$ solid thin film
- Matters
- Sample
- C2H6 crystalline - dep 15K (this sample)
- Processing steps
-
Step Chronology Date Type Process Changes #1 during layer formation 1996-01-01 layer formation room temperature $C_2H_6$ gas deposited under high vacuum on a CsI substrate cooled at 15 K from gas to (partly) crystalline solid phase