- Database
- Experimentalists
- Date
- 2017-01-01
- Provider
- Nathalie Carrasco at LATMOS
- Thickness
- 27.0 ± 2.0 nm
- Surface roughness
- a few nm
- Substrate material
- Si
- Substrate comments
- Single side polished SI substrate. Upon plasma irradiation, SiO2 might form on the interface
- Comments
- Homogeneous organic thin film. Thickness precision and thickness error might be underestimated in Gavilan et al. 2017 paper
- Temperature
- 295.0 ± 2.0 K
- Comments
- Sample kept at ambient temperature
- Type
- ambient air
- Fluid temperature
- 295.0 ± 2.0 K
- Fluid pressure
- 1.0 atm
- Number
- 1
- Layers
-
- OxyTholins LATMOS Film 90%N2:8%CO2:2%CH4 , 79.0 nm