SiC, amorphous | DOCCD

Step	Chronology	Date	Type	Process	Changes
#1	before layer formation		thermal	Conversion of the polymer dimethylpolysilane (-Si(CH $_{3}$ ) $_{2}$ ) $_{n}$ to polycarbosilane (PCS) (-CH $_{2}$ -SiHCH $_{3}$ -CH $_{2}$ -Si(CH $_{3}$ ) $_{2}$ ) $_{n}$
#2	during layer formation		thermal	Heating a sheet of polycarbosilane on Si substrate to 1123 K and hold for one hour.	a thin film of SiC for IR transmission measurements was produced

Comments

To avoid the oxidation of polycarbosilane to silicon oxide all preparational steps were applied in a glove box and the heating procedure was performed under dried argon atmosphere.