thin film H2O crystalline ice (Ic and/or Ih) | GhoSST | SSHADE

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Sample

Name: thin film H2O crystalline ice (Ic and/or Ih)

Owner of sample

Database

GhoSST

Experimentalists

Origin of sample

Date: 2024-10-10

Physical characteristics

Thickness: 173.0 $\pm$ 0.3 $nm$
Diameter: 13000000.0 $nm$
Substrate material: ZnSe
Substrate comments: disk diameter 13 mm, thickness 2 mm
Comments: prepared with the IGLIAS setup - sample deposited at 150 K and then cooled to the desired irradiation temperature (110K) and then irradiated during spectrum recording

Sample environment: Temperature

Temperature: 110.0 $\pm$ 1.0 $K$
Time at T: 30.0 $\pm$ 5.0 $min$
Temperature max: 110.0 $\pm$ 1.0 $K$

Sample environment: Fluid

Type: vacuum
Fluid pressure: 2.0e-07 $\pm$ 1.0e-08 $mbar$

Layers in sample

Number

1

Layers

thin film , 173.0 $nm$

Sample processings

Title

condensation of crystalline H2O ice (Ih and/or Ic)

Precursors

Matters

H2O liquid - deionized

Produced sample

Sample

thin film H2O crystalline ice (Ic and/or Ih) (this sample)

Processing steps

Step	Chronology	Date	Type	Process	Changes
#1	before layer formation	2024-10-10	fluid physical	three freeze-thaw cycles with liquid nitrogen to purify the water
#2	before layer formation	2024-10-10	fluid physical	sublimation of solid H2O at a few tens of °C under vacuum	from solid to gas phase
#3	during layer formation	2024-10-10	layer formation	flux of H2O gas was deposited at 150 K under vacuum	from gas to solid crystalline ice phase (Ih and/or Ic)