Sample
Name
thin film H2O crystalline ice (Ic or Ih)
Date
2024-10-08
Thickness
115.0 ± 0.2 nm
Diameter
13000000.0 nm
Substrate material
ZnSe
Substrate comments
disk diameter 13 mm, thickness 2 mm
Comments
prepared with the IGLIAS setup - sample deposited at 150 K and then cooled to the desired irradiation temperature (110K) and then irradiated during spectrum recording
Temperature
120.0 ± 1.0 K
Time at T
30.0 ± 5.0 min
Temperature max
120.0 ± 1.0 K
Type
vacuum
Fluid pressure
2.0e-07 ± 1.0e-08 mbar
Number
1
Layers
Title
condensation of crystalline H2O ice (Ih or Ic)

Precursors

Matters

Produced sample

Sample
thin film H2O crystalline ice (Ic or Ih) (this sample)
Processing steps
Step Chronology Date Type Process Changes
#1 before layer formation 2024-08-10 fluid physical three freeze-thaw cycles with liquid nitrogen to purify the water
#2 before layer formation 2024-08-10 fluid physical sublimation of solid H2O at a few tens of °C under vacuum from solid to gas phase
#3 during layer formation 2024-08-10 layer formation flux of H2O gas was deposited at 150 K under vacuum from gas to solid crystalline ice phase (Ih or Ic)