IOM from unshocked Murchison | GhoSST | SSHADE

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Sample

Name: IOM from unshocked Murchison

Owner of sample

Database

GhoSST

Experimentalists

Eric Quirico

Origin of sample

Date: 2010-01-01
Provider: IPAG

Physical characteristics

Thickness: 10.0 $\pm$ 5.0 ${\mu}m$
Diameter: 50.0 ${\mu}m$
Substrate material: microscope glass slide
Comments: manual selection under binocular of about 10 IOM fragments of approximate diameter of 50 microns

Sample environment: Temperature

Temperature: 22.0 $\pm$ 2.0 $^{\circ}C$
Temperature max: 22.0 $\pm$ 2.0 $^{\circ}C$
Comments: sample prepared and stored, and data acquired under standard temperature and pressure conditions. The temperature may change during Raman data acquisition (laser irradiation), but it has not been quantified

Sample environment: Fluid

Type: ambient air
Fluid pressure: 1.0 $\pm$ 0.1 $atm$
Comments: MATair_lab_wet

Documentation and publication

Publications

Quirico et al., 2025, Meteorit. Planet. Sci.

Layers in sample

Number

1

Layers

IOM fragments of unshocked Murchison , 10.0 ${\mu}m$

Sample processings

Title

Preparation of the sample for Raman measurements

Precursors

Matters

IOM unshocked Murchison

Produced sample

Sample

IOM from unshocked Murchison (this sample)

Processing steps

Step	Chronology	Date	Type	Process	Changes
#1	before layer formation		mechanical	Manual selection under optical binocular of about 10 IOM fragments of about 50 microns diameter.
#2	during layer formation		mechanical	Fragments pressed between two glass slides with a mechanical press	Fragments crushed down to a thickness of about 10 microns