- Database
- Experimentalists
- Date
- 1993-07-17
- Diameter
- 20000.0 ${\mu}m$
- Surface roughness
- very low
- Substrate material
- CsI
- Substrate comments
- disk diameter 25mm, thickness 2mm
- Temperature
- 15.0 $\pm$ 0.5 $K$
- Temperature max
- 15.0 $\pm$ 0.5 $K$
- Type
- vacuum
- Publications
- Number
- 1
- Layers
- Title
- Crystallisation of C2H4 solid phase
- Matters
- Sample
- C2H4 crystalline - dep 15K (this sample)
- Processing steps
-
Step Chronology Date Type Process Changes #1 during layer formation 1996-01-01 layer formation room T gas deposited at 15K under vacuum from gas to crystalline solid phase