- Database
- Experimentalists
- Date
- 1999-01-01
- Surface roughness
- very low
- Substrate material
- MgF2
- Temperature
- 40.0 $\pm$ 0.5 $K$
- Temperature max
- 40.0 $\pm$ 0.5 $K$
- Type
- vacuum
- Number
- 1
- Layers
- Title
- Crystallization of NO solid phase
- Matters
- Sample
- NO crystalline (this sample)
- Processing steps
-
Step Chronology Date Type Process Changes #1 during layer formation 1999-01-01 layer formation Thin film deposited at 40K under vacuum from slow molecular flow of NO gas from gas to solid phase