CH4 crystalline II - film 0.275µm | GhoSST | SSHADE

Sample

Name: CH4 crystalline II - film 0.275µm

Owner of sample

Database

GhoSST

Experimentalists

Origin of sample

Date: 1995-04-25

Physical characteristics

Thickness: 0.275 $\pm$ 0.005 ${\mu}m$
Diameter: 20000.0 ${\mu}m$
Volume: 86000000.0 $micron^3$
Substrate material: CsI
Substrate comments: window 2mm thick
Comments: Thin film - 1st deposition

Sample environment: Temperature

Temperature: 15.0 $\pm$ 0.5 $K$
Temperature max: 15.0 $\pm$ 0.5 $K$
Comments: heating from 15K to 38K

Sample environment: Fluid

Type: vacuum
Fluid pressure: 1.0e-12 $\pm$ 1.0e-12 $bar$
Comments: residual UHV vacuum gases

Documentation and publication

Publications

Trotta, 1996, 1 - 220

Layers in sample

Number

1

Layers

CH4 crystalline II - film 0.275µm , 0.275 ${\mu}m$

Sample processings

Title

Formation of CH4 solid phase

Precursors

Matters

CH4 gas N45 - Air Liquide

Produced sample

Sample

CH4 crystalline II - film 0.275µm (this sample)

Processing steps

Step	Chronology	Date	Type	Process	Changes
#1	during layer formation	1995-04-25	layer formation	CH4 gas (300K - 10 mb) deposition at 15K under vacuum	from gas to solid phase