- Database
- Experimentalists
- Date
- 2017-01-01
- Provider
- Nathalie Carrasco at LATMOS
- Thickness
- 1139.0 $\pm$ 42.0 $nm$
- Surface roughness
- 13
- Substrate material
- Si
- Substrate comments
- Single side polished SI substrate. Upon plasma irradiation, SiO2 might form on the interface
- Comments
- Homogeneous organic thin film.
- Temperature
- 295.0 $\pm$ 2.0 $K$
- Comments
- Sample kept at ambient temperature
- Type
- ambient air
- Fluid temperature
- 295.0 $\pm$ 2.0 $K$
- Fluid pressure
- 1.0 $atm$
- Source
- synchrotron radiation
- Chronology
- before spectrum
- Irradiation time
- 600.0 $min$
- Family
- photons
- Type
- X photons
- Energy
- 0.5 $keV.particle^{-1}$
- Particle flux
- 1e+17 $particle.s^{-1}.m^{-2}$
- Particle fluence
- 3.6e+21 $particle.m^{-2}$
- Radiant flux
- 8.01088 $W * m**-2$
- Radiant fluence
- 288400.0 $J * m**-2$
Particle
Radiance
- Number
- 1
- Layers
-
- Tholins Film for X-ray irradiation LATMOS 95%N2:5%CH4 , 1139.0 $nm$